CR Micro SiC MOSFET Distributor | Full 1200 V Lineup
Genuine CR Micro SiC MOSFETs from 650 V to 2200 V, from 10 mOhm in QDPAK, TOLL and TO-247-4, for chargers, solar and server power.
CR Micro SiC MOSFET Overview
BeiLuo supplies genuine CR Micro silicon carbide MOSFETs, wide-bandgap switches that turn off cleanly with no tail current and switch far faster than silicon with lower loss. The CR Micro SiC MOSFET line covers 650 V, 750 V, 1200 V, 1700 V and 2200 V classes with on-resistance values from about 10 milliohm in the 750 V family, in packages that range from the surface-mount QDPAK and TOLL to the classic TO-247 and the four-lead TO-247-4. Because SiC switches fast, a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, EV charging, solar inverters, energy storage and server power supplies. The four-lead packages remove source inductance from the gate loop, which tames the ringing that fast SiC switching would otherwise cause, and the low gate charge keeps the drive power small. Every device BeiLuo ships is factory-traceable and includes an import declaration, a certificate of origin and a RoHS compliance file. Our FAE team helps you compare on-resistance, gate charge and package, choose a gate-drive scheme and verify the thermal path. Selecting a SiC MOSFET means matching Vdss, Id and the hot on-resistance to your voltage, current and thermal budget, then confirming the gate drive and loop inductance for clean switching.
CR Micro SiC MOSFET Product Range
In-stock SiC MOSFET series available now, each with import documentation and FAE support. Click a model for full specifications and purchase information.
| Model | VDSS (V) | ID (A) | RDS(on)@15V typ (mOhm) | Package | Qg (nC) |
|---|---|---|---|---|---|
| CRXQF13M120G4Z | 1200 V | 145 A | 17 | TO-247-4 | 202 |
| CRXQ75M120G4Z | 1200 V | 25 A | 94 | TO-247 | 47 |
Frequently Asked Questions
How do I read the CR Micro SiC MOSFET table?
VDSS sets the voltage class, ID the current and RDS(on) the conduction loss, while Qg drives the gate-drive and switching-loss estimate. Package then decides the gate-loop inductance and the assembly method.
On-resistance rises with temperature, so check the hot value for cooling.
When is SiC worth it over silicon?
SiC pays off when high switching frequency, low loss and high temperature matter together, such as on-board chargers, solar inverters and server power supplies. At low frequency and high current, a Super Junction silicon MOSFET or an IGBT can still be more economical.
Compare total system efficiency and cooling, not just device price.
How do I drive a CR Micro SiC MOSFET?
SiC switches fast, so gate-loop and commutation-loop inductance dominate ringing and overshoot. Use a stiff driver, a short gate loop and a four-lead package, and tune the gate resistor to your EMI target.
Our application notes cover SiC gate-drive practice.
Can I get samples to evaluate?
Yes. We provide samples of the SiC MOSFETs for your own efficiency and thermal testing, with documentation included and FAE support during bring-up.
Request a sample and we will confirm stock and lead time.
Documentation
Need a quote or samples?
Request pricing, samples or technical consultation for CR Micro SiC MOSFET products. Our FAE team responds within one business day.
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